收藏本站
January 2014
FDD390N15ALZ
N-Channel PowerTrench ? MOSFET ?
150 V, 26 A, 42 m ?
Features
? R DS(on) = 33.4 m ? (Typ.) @ V GS = 10 V, I D = 26 A
? R DS(on) = 42.2 m ? (Typ.) @ V GS = 4.5 V, I D = 20 A
? Fast Switching Speed
? Low Gate Charge, Q G = 17.6 nC (Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advanced PowerTrench ? process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
? Consumer Applicances
? LED TV
? Synchronous Rectification
? Uninterruptible Power Supplies
? Micro Solar Inverter
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD390N15ALZ
150
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±20
26
17
V
A
I DM
Drain Current
- Pulsed
(Note 1)
104
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
96
13
63
0.5
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD390N15ALZ
2.0
87
Unit
o C/W
?2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDD390N15A MOSFET N-CH 150V 26A DPAK
FDD3N40TF MOSFET N-CH 400V 2A DPAK
FDD3N50NZTM MOSFET N-CH 500V DPAK
FDD4141 MOSFET P-CH 40V 10.8A DPAK
FDD4243_F085 MOSFET P-CH 40V 6.7A DPAK
FDD4685_F085 MOSFET P-CH 40V 8.4A DPAK
FDD5353 MOSFET N-CH 60V 11.5A DPAK
FDD5612 MOSFET N-CH 60V 5.4A DPAK
相关代理商/技术参数
FDD3N40 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET
FDD3N40TF 功能描述:MOSFET 400V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3N40TM 功能描述:MOSFET 400V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3N50NZ 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 2.5A, 2.5???
FDD3N50NZTM 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD4141 功能描述:MOSFET -40V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD4141_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -40V, -50A, 12.3m??
FDD4141_F085 功能描述:MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube